Vishay SIHB21N80AE N channel-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-263 SIHB21N80AE-T5-GE3
- RS Stock No.:
- 735-129
- Mfr. Part No.:
- SIHB21N80AE-T5-GE3
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 tape of 1 unit)*
€3.61
(exc. VAT)
€4.44
(inc. VAT)
Temporarily out of stock
- Shipping from 28 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | €3.61 |
| 10 - 49 | €2.23 |
| 50 - 99 | €1.74 |
| 100 + | €1.44 |
*price indicative
- RS Stock No.:
- 735-129
- Mfr. Part No.:
- SIHB21N80AE-T5-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 17.4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | SIHB21N80AE | |
| Package Type | TO-263 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.205Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 179W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 0.42mm | |
| Width | 0.355mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 17.4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series SIHB21N80AE | ||
Package Type TO-263 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.205Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 179W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 0.42mm | ||
Width 0.355mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay Power MOSFET offers high efficiency and robust performance in power supplies, suitable for demanding applications in server and telecom environments. It is designed to optimise energy management and minimise losses.
Low effective capacitance contributing to Faster response times
Single configuration streamlines design and integration
Related links
- Vishay SIHB21N80AE N channel-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB21N80AE-T1-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB21N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- Vishay SiHW21N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247 SIHW21N80AE-GE3
- Vishay SiHG21N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247 SIHG21N80AE-GE3
- Vishay SiHW21N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247
- Vishay SiHG21N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
