Infineon HEXFET N-Channel MOSFET, 160 A, 60 V, 3-Pin DPAK IRFS3306PBF
- RS Stock No.:
- 145-8610
- Mfr. Part No.:
- IRFS3306PBF
- Manufacturer:
- Infineon
Subtotal (1 tube of 50 units)**
€113.65
(exc. VAT)
€139.80
(inc. VAT)
Temporarily out of stock - back order for despatch when stock is available*
* Delivery dates may change based on your chosen quantity and delivery address.
Units | Per unit | Per Tube** |
|---|---|---|
| 50 + | €2.273 | €113.65 |
**price indicative
- RS Stock No.:
- 145-8610
- Mfr. Part No.:
- IRFS3306PBF
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 160 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DPAK (TO-252) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 230 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 85 nC @ 10 V | |
| Length | 4.06mm | |
| Width | 9.65mm | |
| Number of Elements per Chip | 1 | |
| Height | 14.61mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 160 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DPAK (TO-252) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 230 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 85 nC @ 10 V | ||
Length 4.06mm | ||
Width 9.65mm | ||
Number of Elements per Chip 1 | ||
Height 14.61mm | ||
Minimum Operating Temperature -55 °C | ||
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