Infineon HEXFET N-Channel MOSFET, 43 A, 60 V, 3-Pin D2PAK IRFS3806TRLPBF

RS Stock No.:: 145-9494
Mfr. Part No.:: IRFS3806TRLPBF
Manufacturer:: Infineon

Infineon HEXFET N-Channel MOSFET, 43 A, 60 V, 3-Pin D2PAK IRFS3806TRLPBF

Bulk discount available

Subtotal (1 reel of 800 units)**

€428.80

(exc. VAT)

€527.20

(inc. VAT)

800 In stock for delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Real time stock check

Units	Per unit	Per Reel**
800 - 800	€0.536	€428.80
1600 - 1600	€0.509	€407.20
2400 +	€0.479	€383.20

**price indicative

RS Stock No.:: 145-9494
Mfr. Part No.:: IRFS3806TRLPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 60V to 80V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 43A Maximum Continuous Drain Current, 71W Maximum Power Dissipation - IRFS3806TRLPBF

This MOSFET is crafted for optimal performance in high-efficiency applications. Its enhancement mode configuration is pivotal in power management, driving significant usage across diverse electronic systems. It supports efficient switching and signal amplification, essential for sectors such as automation, electronics, and the electrical and mechanical industries.

Features & Benefits

• High continuous drain current capability of up to 43A
• Efficient operation with a maximum drain-source voltage of 60V
• Low on-resistance reduces power loss
• High-temperature application suitability with a range up to +175°C
• Space-saving surface mount design
• Enhanced ruggedness against dynamic stress for consistent performance

Applications

• Ideal for high-speed power switching scenarios
• Used in uninterruptible power supply systems
• Applicable in synchronous rectification within switched-mode power supplies
• Suitable for hard-switched and high-frequency circuits

What is the maximum gate-to-source voltage?

The maximum gate-to-source voltage for this component is -20V to +20V, allowing flexibility in various circuit designs.

How does the on-resistance affect power dissipation?

Lower on-resistance minimises power dissipation during operation, leading to enhanced efficiency and thermal performance.

What is the typical gate charge required?

The typical gate charge at a gate-source voltage of 10V is 22nC, enabling quick switching transitions.

Is it compatible with surface mount PCB designs?

Yes, the surface mount design is suitable for modern PCB layouts, facilitating integration into compact electronic devices.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	43 A
Maximum Drain Source Voltage	60 V
Series	HEXFET
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	15.8 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	71 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Length	10.67mm
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	22 nC @ 10 V
Width	9.65mm
Minimum Operating Temperature	-55 °C
Height	4.83mm