N-Channel MOSFET, 16 A, 30 V, 8-Pin SO-8 Infineon IRF7805ZTRPBF

This MOSFET from Infineon employs advanced HEXFET technology, providing optimised performance for high-efficiency applications. With its N-channel configuration, it effectively manages high continuous drain currents while maintaining low on-resistance, making it suitable for tasks requiring robust electrical efficiency. The surface mount capability and compact SO-8 package enhance its versatility, particularly for DC-DC converter circuits powering modern electronic devices.

• Low Rds(on) to minimise energy loss
• Increases efficiency in high current applications
• Excellent thermal performance up to +150°C
• Fast switching capabilities for improved device response
• Maximum gate-source voltage of ±20V

• Applications requiring low conduction losses
• Mobile communication devices and processors
• Power supply systems for electronic devices
• Automation and control in electrical systems

It can handle up to 16A, allowing for strong performance in various applications.

Its low Rds(on) and high efficiency reduce overall power losses, leading to effective energy management.

Yes, it is rated for a maximum operating temperature of +150°C, ensuring functionality in diverse conditions.

The fast switching capabilities enhance device response, making it suitable for high-frequency applications.