Vishay SQ Rugged Type P-Channel MOSFET, 6.2 A, 30 V Enhancement, 8-Pin SOIC SQ4431EY-T1_GE3

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RS Stock No.:
165-6285
Mfr. Part No.:
SQ4431EY-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

6.2A

Maximum Drain Source Voltage Vds

30V

Series

SQ Rugged

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

-20V, +20V

Typical Gate Charge Qg @ Vgs

25nC

Maximum Power Dissipation Pd

6W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.1V

Maximum Operating Temperature

175°C

Height

1.55mm

Length

5mm

Width

4mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN

P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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