N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB Vishay SIHP8N50D-GE3
- RS Stock No.:
- 165-7113
- Mfr. Part No.:
- SIHP8N50D-GE3
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 tube of 50 units)**
€38.95
(exc. VAT)
€47.90
(inc. VAT)
Temporarily out of stock - back order for despatch when stock is available*
* Delivery dates may change based on your chosen quantity and delivery address.
Units | Per unit | Per Tube** |
|---|---|---|
| 50 - 50 | €0.779 | €38.95 |
| 100 - 200 | €0.662 | €33.10 |
| 250 + | €0.584 | €29.20 |
**price indicative
- RS Stock No.:
- 165-7113
- Mfr. Part No.:
- SIHP8N50D-GE3
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8.7 A | |
| Maximum Drain Source Voltage | 500 V | |
| Series | D Series | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 850 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 156 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.51mm | |
| Typical Gate Charge @ Vgs | 15 nC @ 10 V | |
| Width | 4.65mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Height | 9.01mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 8.7 A | ||
Maximum Drain Source Voltage 500 V | ||
Series D Series | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 850 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 156 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Length 10.51mm | ||
Typical Gate Charge @ Vgs 15 nC @ 10 V | ||
Width 4.65mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Height 9.01mm | ||
Minimum Operating Temperature -55 °C | ||