P-Channel MOSFET, 10.4 A, 30 V, 6-Pin SOT-363 Vishay SIA449DJ-T1-GE3

RS Stock No.:: 165-7182
Mfr. Part No.:: SIA449DJ-T1-GE3
Manufacturer:: Vishay

P-Channel MOSFET, 10.4 A, 30 V, 6-Pin SOT-363 Vishay SIA449DJ-T1-GE3

3000 In stock for delivery within 2 working days

Price Each (On a Reel of 3000)

€0.143

(exc. VAT)

€0.176

(inc. VAT)

Units	Per unit	Per Reel*
3000 +	€0.143	€429.00

*price indicative

RS Stock No.:: 165-7182
Mfr. Part No.:: SIA449DJ-T1-GE3
Manufacturer:: Vishay

SiA449DJ, P-Channel 30V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	10.4 A
Maximum Drain Source Voltage	30 V
Package Type	SOT-363
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	38 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.6V
Maximum Power Dissipation	19 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-12 V, +12 V
Typical Gate Charge @ Vgs	48 nC @ 10 V
Length	2.15mm
Transistor Material	Si
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Width	2.15mm
Minimum Operating Temperature	-55 °C
Height	0.8mm

P-Channel MOSFET, 10.4 A, 30 V, 6-Pin SOT-363 Vishay SIA449DJ-T1-GE3

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor