Infineon HEXFET N-Channel MOSFET, 30 A, 55 V, 3-Pin DPAK IRFR4105ZPBF
- RS Stock No.:
- 165-7558
- Mfr. Part No.:
- IRFR4105ZPBF
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 tube of 75 units)**
€62.70
(exc. VAT)
€77.10
(inc. VAT)
Temporarily out of stock - back order for despatch when stock is available*
* Delivery dates may change based on your chosen quantity and delivery address.
Units | Per unit | Per Tube** |
|---|---|---|
| 75 - 75 | €0.836 | €62.70 |
| 150 - 300 | €0.652 | €48.90 |
| 375 - 675 | €0.627 | €47.025 |
| 750 - 1425 | €0.594 | €44.55 |
| 1500 + | €0.527 | €39.525 |
**price indicative
- RS Stock No.:
- 165-7558
- Mfr. Part No.:
- IRFR4105ZPBF
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | DPAK (TO-252) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 24.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 48 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 18 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type DPAK (TO-252) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 24.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 48 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Width 6.22mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 18 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
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