Infineon OptiMOS™ 3 N-Channel MOSFET, 70 A, 40 V, 3-Pin TO-220 IPP048N04NGXKSA1 | RS

Infineon OptiMOS™ 3 N-Channel MOSFET, 70 A, 40 V, 3-Pin TO-220 IPP048N04NGXKSA1

RS Stock No.:: 165-8112
Mfr. Part No.:: IPP048N04NGXKSA1
Manufacturer:: Infineon

Infineon OptiMOS™ 3 N-Channel MOSFET, 70 A, 40 V, 3-Pin TO-220 IPP048N04NGXKSA1

Bulk discount available

Subtotal (1 tube of 50 units)**

€59.75

(exc. VAT)

€73.50

(inc. VAT)

200 In stock for delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Real time stock check

Units	Per unit	Per Tube**
50 - 50	€1.195	€59.75
100 - 200	€0.956	€47.80
250 - 450	€0.896	€44.80
500 - 950	€0.836	€41.80
1000 +	€0.777	€38.85

**price indicative

RS Stock No.:: 165-8112
Mfr. Part No.:: IPP048N04NGXKSA1
Manufacturer:: Infineon

Infineon OptiMOS™3 Power MOSFETs, up to 40V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

Infineon OptiMOS™ 3 Series MOSFET, 70A Maximum Continuous Drain Current, 79W Maximum Power Dissipation - IPP048N04NGXKSA1

This MOSFET is intended for high-efficiency power applications, acting as a vital component in various electronic systems. It ensures consistent performance in challenging environments due to its low on-resistance and substantial power dissipation capability.

Features & Benefits

• Supports up to 70A continuous drain current
• Maximum drain-source voltage of 40V for broad applicability
• Single enhancement mode design enhances operational efficiency
• Low maximum drain-source resistance of 4.8 mΩ minimises heat generation
• Power dissipation capability of 79W optimises thermal management
• Accommodates gate voltage swings from -20V to +20V for improved gate drive versatility

Applications

• Power supply circuits in automation systems
• Motor control in industrial environments
• Power converters for efficient energy management
• Renewable energy systems for effective power handling
• High current switch in electronics

What is the operating temperature range for this component?

The operating temperature range is -55 °C to +175 °C, ensuring effective operation across various conditions.

Can it be used in parallel configurations?

Yes, parallel usage is possible to enhance current handling, provided appropriate thermal management is in place.

What are the recommended gate drive levels for optimal performance?

For optimal performance, it is advised to drive the gate between 10V and 20V, adhering to maximum gate threshold limits.

How can heat dissipation be managed in applications using this device?

Using an appropriate heat sink and ensuring a proper PCB layout can effectively manage heat dissipation.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	70 A
	Maximum Drain Source Voltage	40 V
	Package Type	TO-220
	Series	OptiMOS™ 3
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	4.8 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	79 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	4.572mm
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	31 nC @ 10 V
	Length	10.36mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Forward Diode Voltage	0.89V
	Minimum Operating Temperature	-55 °C
	Height	15.95mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 70 A
	Maximum Drain Source Voltage 40 V
	Package Type TO-220
	Series OptiMOS™ 3
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 4.8 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 79 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 4.572mm
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 31 nC @ 10 V
	Length 10.36mm
	Number of Elements per Chip 1
	Transistor Material Si
	Forward Diode Voltage 0.89V
	Minimum Operating Temperature -55 °C
	Height 15.95mm