Infineon OptiMOS™ -T2 N-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD90N03S4L03ATMA1

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Subtotal (1 reel of 2500 units)*

€1,370.00

(exc. VAT)

€1,685.00

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +€0.548€1,370.00

*price indicative

RS Stock No.:
166-1127
Mfr. Part No.:
IPD90N03S4L03ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Series

OptiMOS™ -T2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

94 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Number of Elements per Chip

1

Width

6.22mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Length

6.5mm

Typical Gate Charge @ Vgs

60 nC @ 10 V

Height

2.3mm

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

RoHS Status: Not Applicable

COO (Country of Origin):
MY

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