MOSFET Vishay SIA817EDJ-T1-GE3

The Vishay SIA817EDJ is a P-channel MOSFET with schottky diode having drain to source(Vds) voltage of -30V. It is having configuration of dual plus integrated schottky. The gate to source voltage(VGS) is 12V. It is having power PAK SC-70 package. It offers drain to source resistance (RDS.) 0.065ohms at 10VGS and 0.08ohms at 4.5VGS. Maximum drain current -4.5A.

Little foot plus Schottky power MOSFET
Thermally enhanced Power PAK SC-70 package small footprint area low on resistance thin 0.75 mm profile
Typical ESD protection (MOSFET): 1500 V (HBM)