Vishay TrenchFET Type P-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 SQD50P06-15L_GE3
- RS Stock No.:
- 180-7967
- Mfr. Part No.:
- SQD50P06-15L_GE3
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
€15.30
(exc. VAT)
€18.80
(inc. VAT)
Last RS stock
- 125 left, ready to ship from another location
- Final 1,360 unit(s) shipping from 08 January 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | €3.06 | €15.30 |
| 50 - 120 | €2.602 | €13.01 |
| 125 - 245 | €2.356 | €11.78 |
| 250 - 495 | €1.90 | €9.50 |
| 500 + | €1.656 | €8.28 |
*price indicative
- RS Stock No.:
- 180-7967
- Mfr. Part No.:
- SQD50P06-15L_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.5V | |
| Typical Gate Charge Qg @ Vgs | 98nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 136W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 2.38mm | |
| Width | 6.73 mm | |
| Length | 10.41mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.5V | ||
Typical Gate Charge Qg @ Vgs 98nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 136W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 2.38mm | ||
Width 6.73 mm | ||
Length 10.41mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- TW
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 15.5mohm at a gate-source voltage of 10V. It has continuous drain current of 50A and maximum power dissipation of 136W. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• Package with low thermal resistance
• TrenchFET power MOSFET
Applications
• Adaptor switch
• Load switches
Certifications
• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
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