Vishay Single 1 Type N-Channel Power MOSFET, 5 A, 500 V, 3-Pin TO-262 IRF830ALPBF
- RS Stock No.:
- 180-8307
- Mfr. Part No.:
- IRF830ALPBF
- Manufacturer:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
€82.80
(exc. VAT)
€101.85
(inc. VAT)
In Stock
- 350 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | €1.656 | €82.80 |
| 100 - 200 | €1.557 | €77.85 |
| 250 + | €1.408 | €70.40 |
*price indicative
- RS Stock No.:
- 180-8307
- Mfr. Part No.:
- IRF830ALPBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-262 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Power Dissipation Pd | 74W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Length | 9.65mm | |
| Height | 4.83mm | |
| Width | 10.67mm | |
| Standards/Approvals | RoHS 2002/95/EC, IEC 61249-2-21 | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-262 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Power Dissipation Pd 74W | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Length 9.65mm | ||
Height 4.83mm | ||
Width 10.67mm | ||
Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21 | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay Power MOSFET, 500V Drain‑Source Voltage, 5A Continuous Drain Current - IRF830ALPBF
This power MOSFET is a single N-channel transistor designed for high-voltage switching and power-conversion duties in electronic systems. Packaged in a TO-262 format, it serves as a compact switching element for circuits requiring elevated drain-to-source voltage capability and moderate continuous current handling in industrial and commercial contexts.
Features and Benefits:
• 500V drain-to-source rating enables high-voltage applications
• 5A continuous drain current supports steady power delivery
• 1.4Ω Rds(on) reduces conduction losses in low-current designs
• 24nC total gate charge allows faster gate transitions
• ±30V gate tolerance permits robust gate-drive margins
• 74W power dissipation capacity aids thermal headroom at load
• 5A continuous drain current supports steady power delivery
• 1.4Ω Rds(on) reduces conduction losses in low-current designs
• 24nC total gate charge allows faster gate transitions
• ±30V gate tolerance permits robust gate-drive margins
• 74W power dissipation capacity aids thermal headroom at load
Applications
• Suitable for offline switch-mode power supplies
• Ideal for high-voltage motor-drive front-ends
• Used with pulse converters requiring fast switching
• Can be used for industrial lamp and heater control
• Appropriate for power conditioning and auxiliary supplies
• Ideal for high-voltage motor-drive front-ends
• Used with pulse converters requiring fast switching
• Can be used for industrial lamp and heater control
• Appropriate for power conditioning and auxiliary supplies
What thermal extremes can the device withstand in operation?
It is specified to operate across a range from -55°C to 150°C, accommodating low-temperature starts and elevated junction temperatures under load.
How many discrete transistor elements are present on the chip?
The semiconductor contains a single element per chip, providing a solitary switching channel for circuit designs.
Which environmental and material standards are reflected in its manufacture?
The component conforms to RoHS 2002/95/EC and IEC 61249-2-21 material and substance standards.
What is the typical forward voltage in diode conduction events?
The intrinsic body diode exhibits a forward voltage around 1.5V during conduction.
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