Vishay Single Type N-Channel Power MOSFET, 10 A, 400 V, 3-Pin TO-263 IRF740ALPBF

RS Stock No.:: 180-8642
Mfr. Part No.:: IRF740ALPBF
Manufacturer:: Vishay

Vishay Single Type N-Channel Power MOSFET, 10 A, 400 V, 3-Pin TO-263 IRF740ALPBF

Subtotal (1 pack of 5 units)*

€10.94

(exc. VAT)

€13.455

(inc. VAT)

In Stock

180 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 +	€2.188	€10.94

*price indicative

RS Stock No.:: 180-8642
Mfr. Part No.:: IRF740ALPBF
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	400V
	Package Type	TO-263
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.55Ω
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	36nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	125W
	Transistor Configuration	Single
	Maximum Operating Temperature	150°C
	Height	4.83mm
	Length	9.65mm
	Width	10.67mm
	Standards/Approvals	IEC 61249-2-21, RoHS 2002/95/EC
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 400V
	Package Type TO-263
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.55Ω
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 36nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 125W
	Transistor Configuration Single
	Maximum Operating Temperature 150°C
	Height 4.83mm
	Length 9.65mm
	Width 10.67mm
	Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay Power MOSFET, 400V Maximum Drain Source Voltage, 10A Maximum Continuous Drain Current - IRF740ALPBF

This power MOSFET is a high-voltage N-channel transistor designed for switching and power-conversion roles in industrial electronics. It operates in demanding thermal environments and suits designs requiring a three-terminal device with robust voltage handling and moderate current capability.

Features and Benefits:

• 400V drain rating for high-voltage switching applications
• 10A continuous drain current to support sustained loads
• 0.55Ω Rds(on) for controlled conduction losses
• 125W power dissipation enabling significant thermal throughput
• 36nC typical gate charge reducing drive energy requirements
• 30V maximum gate-source voltage for standard gate-drive compatibility

Applications

• Suitable for offline SMPS primary switching stages
• Ideal for power-factor-correction circuits in supplies
• Used with motor-control front-ends for low-speed drives
• Can be used for industrial lighting ballast switching
• Useful in high-voltage test and measurement equipment

What thermal range can it withstand during operation?

It is rated to operate from -55°C up to 150°C, allowing use across wide ambient and elevated junction conditions.

Which packaging form factor does it use for PCB mounting?

It is supplied in a TO-263 package, providing a flat power tab and three terminals for surface-mount assembly.

Are there environmental or materials standards associated with it?

The device complies with RoHS 2002/95/EC and follows IEC 61249-2-21 material specifications.

What gate-drive considerations arise from its gate charge?

With a typical Qg of 36nC at Vgs, gate drivers must supply sufficient transient current to achieve the required switching speed without excessive delay.