Vishay SiSS30LDN Type N-Channel MOSFET, 55.5 A, 80 V Enhancement, 8-Pin PowerPAK 1212 SISS30LDN-T1-GE3

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Subtotal (1 pack of 10 units)*

€11.27

(exc. VAT)

€13.86

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 90€1.127€11.27
100 - 240€1.07€10.70
250 - 490€0.812€8.12
500 - 990€0.732€7.32
1000 +€0.619€6.19

*price indicative

Packaging Options:
RS Stock No.:
188-5051
Mfr. Part No.:
SISS30LDN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

55.5A

Maximum Drain Source Voltage Vds

80V

Series

SiSS30LDN

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

57W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

32.5nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.3mm

Height

0.78mm

Width

3.3 mm

Automotive Standard

No

N-Channel 80 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

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