N-Channel MOSFET, 150 A, 40 V, 3-Pin D2PAK Vishay SUM40012EL-GE3
- RS Stock No.:
- 188-5088
- Mfr. Part No.:
- SUM40012EL-GE3
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)**
€13.74
(exc. VAT)
€16.90
(inc. VAT)
Stock check temporarily unavailable - call for stock availability
Units | Per unit | Per Pack** |
|---|---|---|
| 5 - 45 | €2.748 | €13.74 |
| 50 - 120 | €2.338 | €11.69 |
| 125 - 245 | €2.198 | €10.99 |
| 250 - 495 | €2.064 | €10.32 |
| 500 + | €1.92 | €9.60 |
**price indicative
- RS Stock No.:
- 188-5088
- Mfr. Part No.:
- SUM40012EL-GE3
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 150 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 150 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 9.65mm | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.41mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 130 nC @ 10 V | |
| Height | 4.57mm | |
| Forward Diode Voltage | 1.5V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 150 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Width 9.65mm | ||
Maximum Operating Temperature +175 °C | ||
Length 10.41mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 130 nC @ 10 V | ||
Height 4.57mm | ||
Forward Diode Voltage 1.5V | ||
Minimum Operating Temperature -55 °C | ||
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