Vishay TrenchFET Gen IV Type N-Channel MOSFET, 110 A, 45 V Enhancement, 8-Pin SO-8

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Subtotal (1 pack of 50 units)*

€42.30

(exc. VAT)

€52.05

(inc. VAT)

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  • Shipping from 10 June 2027
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Units
Per unit
Per Pack*
50 - 50€0.846€42.30
100 - 200€0.669€33.45
250 - 450€0.593€29.65
500 - 1200€0.55€27.50
1250 +€0.457€22.85

*price indicative

RS Stock No.:
200-6845
Mfr. Part No.:
SIR150DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

45V

Series

TrenchFET Gen IV

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.97mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

65.7W

Typical Gate Charge Qg @ Vgs

70nC

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5.15mm

Standards/Approvals

No

Height

6.15mm

Automotive Standard

No

The Vishay SIR150DP-T1-RE3 is a N-channel 45V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

45 V Drain-source break-down voltage

Tuned for low Qg and Qoss

100 % Rg and UIS tested

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