Vishay SiR104LDP Type N-Channel MOSFET, 81 A, 100 V Enhancement, 8-Pin SO-8 SiR104LDP-T1-RE3

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Subtotal (1 pack of 20 units)*

€26.64

(exc. VAT)

€32.76

(inc. VAT)

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  • Shipping from 10 June 2027
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Units
Per unit
Per Pack*
20 - 80€1.332€26.64
100 - 180€1.305€26.10
200 - 480€1.027€20.54
500 - 980€0.936€18.72
1000 +€0.913€18.26

*price indicative

Packaging Options:
RS Stock No.:
204-7222
Mfr. Part No.:
SiR104LDP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

81A

Maximum Drain Source Voltage Vds

100V

Series

SiR104LDP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.1mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

100W

Typical Gate Charge Qg @ Vgs

110nC

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5.26mm

Height

6.25mm

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 100 V (D-S) MOSFET has a very low RDS x Qg figure-of-merit (FOM). It is tuned for the lowest RDS x Qoss FOM.

TrenchFET Gen IV power MOSFET

100 % Rg and UIS tested

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