Vishay SiHU5N80AE Type N-Channel MOSFET, 4.4 A, 800 V Enhancement, 3-Pin IPAK SIHU5N80AE-GE3

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Subtotal (1 pack of 10 units)*

€5.00

(exc. VAT)

€6.20

(inc. VAT)

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Per Pack*
10 - 90€0.50€5.00
100 - 240€0.481€4.81
250 - 490€0.469€4.69
500 - 990€0.457€4.57
1000 +€0.445€4.45

*price indicative

Packaging Options:
RS Stock No.:
204-7229
Mfr. Part No.:
SIHU5N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.4A

Maximum Drain Source Voltage Vds

800V

Series

SiHU5N80AE

Package Type

IPAK

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.35Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

16.5nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

62.5W

Maximum Operating Temperature

150°C

Height

6.22mm

Standards/Approvals

No

Length

6.73mm

Width

2.39 mm

Automotive Standard

No

The Vishay E Series Power MOSFET has a low figure-of-merit (FOM) Ron x Qg and a low input capacitance (Ciss).

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

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