Vishay SiDR220DP Type N-Channel MOSFET, 100 A, 25 V Enhancement, 8-Pin SO-8 SIDR220DP-T1-RE3

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Subtotal (1 pack of 10 units)*

€35.63

(exc. VAT)

€43.82

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 10€3.563€35.63
20 - 40€2.887€28.87
50 - 90€2.674€26.74
100 - 240€2.495€24.95
250 +€2.388€23.88

*price indicative

Packaging Options:
RS Stock No.:
204-7232
Mfr. Part No.:
SIDR220DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

25V

Package Type

SO-8

Series

SiDR220DP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.58mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

200nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

16 V

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

125W

Maximum Operating Temperature

150°C

Length

6.25mm

Width

5.15 mm

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 25 V (D-S) MOSFET has optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss.

100 % Rg and UIS tested

TrenchFET Gen IV power MOSFET

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