Vishay SiHB068N60EF Type N-Channel MOSFET, 41 A, 600 V Enhancement, 3-Pin TO-263 SIHB068N60EF-GE3

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Subtotal (1 pack of 5 units)*

€33.90

(exc. VAT)

€41.70

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 20€6.78€33.90
25 - 45€5.762€28.81
50 - 120€5.426€27.13
125 - 245€5.088€25.44
250 +€4.884€24.42

*price indicative

Packaging Options:
RS Stock No.:
204-7244
Mfr. Part No.:
SIHB068N60EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

41A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

SiHB068N60EF

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

68mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

250W

Typical Gate Charge Qg @ Vgs

51nC

Maximum Operating Temperature

150°C

Length

14.61mm

Standards/Approvals

No

Height

4.06mm

Automotive Standard

No

The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.

Avalanche energy rated (UIS)

Low figure-of-merit (FOM) Ron x Qg

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