Vishay TrenchFET Type P-Channel MOSFET, 3 A, 80 V Enhancement, 3-Pin SOT-23 Si2387DS-T1-GE3

Bulk discount available

Subtotal (1 pack of 25 units)*

€9.70

(exc. VAT)

€11.925

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 2,525 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
25 - 225€0.388€9.70
250 - 600€0.368€9.20
625 - 1225€0.272€6.80
1250 - 2475€0.252€6.30
2500 +€0.233€5.83

*price indicative

Packaging Options:
RS Stock No.:
228-2814
Mfr. Part No.:
Si2387DS-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

80V

Package Type

SOT-23

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6.8nC

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.12mm

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET Gen IV P-Channel power MOSFET is use for load switch, circuit protection and motor drive control.

100 % Rg and UIS tested

Related links