Vishay TrenchFET N-Channel MOSFET, 113 A, 45 V Enhancement, 8-Pin SO-8 SiR450DP-T1-RE3

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
Packaging Options:
RS Stock No.:
228-2899
Mfr. Part No.:
SiR450DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

113A

Maximum Drain Source Voltage Vds

45V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.8mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

48W

Typical Gate Charge Qg @ Vgs

75.5nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 45 V MOSFET.

100 % Rg and UIS tested

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