Vishay TrenchFET Type N-Channel MOSFET, 350.8 A, 30 V Enhancement, 8-Pin SO-8 SiR500DP-T1-RE3

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Subtotal (1 pack of 5 units)*

€10.94

(exc. VAT)

€13.455

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45€2.188€10.94
50 - 120€1.858€9.29
125 - 245€1.75€8.75
250 - 495€1.644€8.22
500 +€1.094€5.47

*price indicative

Packaging Options:
RS Stock No.:
228-2902
Mfr. Part No.:
SiR500DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

350.8A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.47mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

104.1W

Typical Gate Charge Qg @ Vgs

120nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 30 V MOSFET.

100 % Rg and UIS tested

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