Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 4 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 Dual

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Subtotal (1 pack of 10 units)*

€9.69

(exc. VAT)

€11.92

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 90€0.969€9.69
100 - 240€0.911€9.11
250 - 490€0.823€8.23
500 - 990€0.775€7.75
1000 +€0.727€7.27

*price indicative

Packaging Options:
RS Stock No.:
228-2925
Mfr. Part No.:
SiS590DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET

Package Type

PowerPAK 1212-8 Dual

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.251Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

23.1W

Typical Gate Charge Qg @ Vgs

4.5nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

No

The Vishay Combo N- & P-Channel -100 V MOSFET.

100 % Rg and UIS tested

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