Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 4 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 Dual

Subtotal (1 reel of 3000 units)*

€1,188.00

(exc. VAT)

€1,461.00

(inc. VAT)

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  • 3,000 unit(s) shipping from 20 February 2026
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Units
Per unit
Per Reel*
3000 +€0.396€1,188.00

*price indicative

RS Stock No.:
228-2924
Mfr. Part No.:
SiS590DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK 1212-8 Dual

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.251Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

4.5nC

Maximum Power Dissipation Pd

23.1W

Maximum Gate Source Voltage Vgs

20 V

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

No

The Vishay Combo N- & P-Channel -100 V MOSFET.

100 % Rg and UIS tested

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