Essential and Operational Technologies

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	90 A
	Maximum Drain Source Voltage	30 V
	Package Type	DPAK (TO-252)
	Series	OptiMOS™ -T2
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	0.0045 Ω
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4.0V
	Number of Elements per Chip	1
	Transistor Material	Silicon

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 90 A
	Maximum Drain Source Voltage 30 V
	Package Type DPAK (TO-252)
	Series OptiMOS™ -T2
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 0.0045 Ω
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4.0V
	Number of Elements per Chip 1
	Transistor Material Silicon

Infineon OptiMOS™ -T2 Silicon P-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD90P03P404ATMA2

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