Infineon F4 Quad SiC N-Channel MOSFET Module, 100 A, 1200 V AG-EASY2B F411MR12W2M1B76BOMA1

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Subtotal (1 unit)*

€379.04

(exc. VAT)

€466.22

(inc. VAT)

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Units
Per unit
1 - 1€379.04
2 - 4€371.46
5 - 9€363.89
10 - 14€356.68
15 +€349.47

*price indicative

Packaging Options:
RS Stock No.:
234-8961
Mfr. Part No.:
F411MR12W2M1B76BOMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

1200 V

Package Type

AG-EASY2B

Series

F4

Mounting Type

Screw Mount

Maximum Drain Source Resistance

0.0113 Ω

Maximum Gate Threshold Voltage

5.55V

Transistor Material

SiC

Number of Elements per Chip

4

The Infineon IGBT module has a 4 N-Channel (Half Bridge) FET Type works with 1200V Drain to Source Voltage and 100A continuous drain current.

Chassis mount
-40°C to 150°C operating temperature

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