Vishay Type N-Channel MOSFET, 410 A, 30 V Depletion, 4-Pin PowerPAK SO-8L SQJ186EP-T1_GE3

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

€8.54

(exc. VAT)

€10.50

(inc. VAT)

Add to Basket
Select or type quantity
Being discontinued
  • Final 2,010 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
10 - 90€0.854€8.54
100 - 240€0.803€8.03
250 - 490€0.726€7.26
500 - 990€0.683€6.83
1000 +€0.642€6.42

*price indicative

Packaging Options:
RS Stock No.:
239-8671
Mfr. Part No.:
SQJ186EP-T1_GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

410A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK SO-8L

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.02Ω

Channel Mode

Depletion

Typical Gate Charge Qg @ Vgs

43nC

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

255W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

125°C

Length

6.15mm

Standards/Approvals

No

Width

4.9 mm

Automotive Standard

AEC-Q101

The Vishay SIDR is automotive N-Channel MOSFET which operates at 80 V and 175 °C temperature. This MOSFET used for high power density.

AEC-Q101 qualified

UIS tested

Related links