MPN

Vishay Type N-Channel MOSFET, 25 A, 30 V PowerPAK SO-8 SIRA12DP-T1-GE3

RS Stock No.:: 256-7431
Mfr. Part No.:: SIRA12DP-T1-GE3
Manufacturer:: Vishay

Vishay Type N-Channel MOSFET, 25 A, 30 V PowerPAK SO-8 SIRA12DP-T1-GE3

Bulk discount available

Subtotal (1 pack of 5 units)*

€3.02

(exc. VAT)

€3.715

(inc. VAT)

In Stock

2,985 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 45	€0.604	€3.02
50 - 95	€0.542	€2.71
100 - 245	€0.422	€2.11
250 - 995	€0.416	€2.08
1000 +	€0.32	€1.60

*price indicative

RS Stock No.:: 256-7431
Mfr. Part No.:: SIRA12DP-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	30V
	Package Type	PowerPAK SO-8
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	0.0095Ω
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 30V
	Package Type PowerPAK SO-8
	Mount Type Surface
	Maximum Drain Source Resistance Rds 0.0095Ω
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - SIRA12DP-T1-GE3

The Vishay Semiconductor N-channel 30 V 25A (Tc) 4.5W (Ta), 31W (Tc) surface mount iTime is halogen-free according to IEC 61249-2-21 definition and its applications are high power density DC, DC, synchronous rectification, VRMs and embedded DC, DC.

TrenchFET gen IV power mosfet

100 % Rg and UIS tested

Compliant to RoHS directive 2002/95/EC

Vishay Type N-Channel MOSFET, 25 A, 30 V PowerPAK SO-8 SIRA12DP-T1-GE3

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