Infineon IPD Type N-Channel MOSFET, 60 A, 100 V Enhancement, 3-Pin TO-252 IPD60N10S412ATMA1

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 2 units)*

€3.11

(exc. VAT)

€3.826

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 2,304 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 18€1.555€3.11
20 - 48€1.355€2.71
50 - 98€1.28€2.56
100 - 198€1.18€2.36
200 +€1.105€2.21

*price indicative

Packaging Options:
RS Stock No.:
258-3849
Mfr. Part No.:
IPD60N10S412ATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

100V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12.2mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

94W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

26nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T2 power-transistor is P-channel normal level enhancement mode. It has 175°C operating temperature.

AEC qualified

MSL1 up to 260°C peak reflow

Related links