Infineon HEXFET Type N-Channel MOSFET, 2.4 A, 30 V Enhancement, 8-Pin SOIC

Bulk discount available

Subtotal (1 reel of 4000 units)*

€876.00

(exc. VAT)

€1,076.00

(inc. VAT)

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Units
Per unit
Per Reel*
4000 - 4000€0.219€876.00
8000 +€0.208€832.00

*price indicative

RS Stock No.:
262-6739
Mfr. Part No.:
IRF7503TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.4A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

SOIC

Pin Count

8

Maximum Drain Source Resistance Rds

222mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

7.8nC

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1.25W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It has smallest footprint which makes it ideal for applications for where printed circuit board space is at premium.

Ultra low resistance

Available in tape and reel

Very small SOIC package