Essential and Operational Technologies

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	33 A
	Maximum Drain Source Voltage	250 V
	Package Type	TO-220AB
	Series	UniFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	94 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	235 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	1
	Width	4.83mm
	Transistor Material	Si
	Length	10.67mm
	Typical Gate Charge @ Vgs	36.8 nC @ 10 V
	Minimum Operating Temperature	-55 °C
	Height	9.4mm

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 33 A
	Maximum Drain Source Voltage 250 V
	Package Type TO-220AB
	Series UniFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 94 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 235 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 1
	Width 4.83mm
	Transistor Material Si
	Length 10.67mm
	Typical Gate Charge @ Vgs 36.8 nC @ 10 V
	Minimum Operating Temperature -55 °C
	Height 9.4mm

onsemi UniFET N-Channel MOSFET, 33 A, 250 V, 3-Pin TO-220AB FDP33N25

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

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