onsemi Single 1 MOSFET, 9.4 A, 60 V Enhancement, 3-Pin IPAK (TO-251) FQU11P06TU
- RS Stock No.:
- 671-5335
- Mfr. Part No.:
- FQU11P06TU
- Manufacturer:
- onsemi
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 671-5335
- Mfr. Part No.:
- FQU11P06TU
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Transistor Configuration | Single | |
| Number of Elements per Chip | 1 | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 9.4 A | |
| Maximum Drain Source Voltage (Vds) | 60 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | IPAK (TO-251) | |
| Maximum Drain Source Resistance (Rds) | 185 mΩ | |
| Maximum Gate Source Voltage (Vgs) | -30 V, +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Maximum Power Dissipation (Pd) | 2.5 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Through Hole | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Transistor Configuration Single | ||
Number of Elements per Chip 1 | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 9.4 A | ||
Maximum Drain Source Voltage (Vds) 60 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type IPAK (TO-251) | ||
Maximum Drain Source Resistance (Rds) 185 mΩ | ||
Maximum Gate Source Voltage (Vgs) -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Maximum Power Dissipation (Pd) 2.5 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Through Hole | ||
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
Features and Benefits:
• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology
Applications:
• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi Single SuperFET II 1 N-Channel MOSFET 600 V Enhancement, 3-Pin IPAK (TO-251) FCU900N60Z
- onsemi QFET Type P-Channel MOSFET 200 V Enhancement, 3-Pin IPAK (TO-251)
- onsemi N-Channel MOSFET 50 V Enhancement, 3-Pin IPAK (TO-251) RFD14N05L
- onsemi QFET Type P-Channel MOSFET 200 V Enhancement, 3-Pin IPAK (TO-251) FQU5P20TU
- Vishay N-Channel MOSFET 100 V Enhancement, 3-Pin IPAK (TO-251) IRLU110PBF
- Vishay IRFU N-Channel MOSFET 100 V Enhancement, 3-Pin IPAK (TO-251) IRFU110PBF
- Vishay Type P-Channel MOSFET 100 V Enhancement, 3-Pin IPAK (TO-251) IRFU9110PBF
- STMicroelectronics MDmesh N-Channel Power MOSFET 600 V Enhancement, 3-Pin IPAK (TO-251) STU7NM60N