Essential and Operational Technologies

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	150 A
	Maximum Drain Source Voltage	30 V
	Series	HEXFET
	Package Type	TO-220AB
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	3 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.35V
	Minimum Gate Threshold Voltage	1.35V
	Maximum Power Dissipation	140 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	4.83mm
	Number of Elements per Chip	1
	Length	10.67mm
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	36 nC @ 4.5 V
	Transistor Material	Si
	Height	9.02mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 150 A
	Maximum Drain Source Voltage 30 V
	Series HEXFET
	Package Type TO-220AB
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 3 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.35V
	Minimum Gate Threshold Voltage 1.35V
	Maximum Power Dissipation 140 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 4.83mm
	Number of Elements per Chip 1
	Length 10.67mm
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 36 nC @ 4.5 V
	Transistor Material Si
	Height 9.02mm
	Minimum Operating Temperature -55 °C

Infineon HEXFET N-Channel MOSFET, 150 A, 30 V, 3-Pin TO-220AB IRLB8743PBF

N-Channel Power MOSFET 30V, Infineon

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