Infineon OptiMOS 3 N-Channel MOSFET, 53 A, 30 V, 8-Pin TDSON BSC080N03MSGATMA1

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€3.27

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€4.02

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5 - 20€0.654€3.27
25 +€0.552€2.76

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Packaging Options:
RS Stock No.:
754-5288
Mfr. Part No.:
BSC080N03MSGATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

53 A

Maximum Drain Source Voltage

30 V

Package Type

TDSON

Series

OptiMOS 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

10.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.1mm

Typical Gate Charge @ Vgs

21 nC @ 10 V

Length

5.35mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1.1mm

Infineon OptiMOS™3 Power MOSFETs, up to 40V


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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