Essential and Operational Technologies

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Units	Per unit
1 - 4	€7.06
5 - 9	€6.70
10 - 24	€6.03
25 - 49	€5.44
50 +	€5.16

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	64 A
	Maximum Drain Source Voltage	250 V
	Series	OptiMOS™ 3
	Package Type	TO-220
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	20 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	300 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	64 nC @ 10 V
	Length	10.36mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Width	15.95mm
	Minimum Operating Temperature	-55 °C
	Height	4.57mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 64 A
	Maximum Drain Source Voltage 250 V
	Series OptiMOS™ 3
	Package Type TO-220
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 20 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 300 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 64 nC @ 10 V
	Length 10.36mm
	Number of Elements per Chip 1
	Transistor Material Si
	Width 15.95mm
	Minimum Operating Temperature -55 °C
	Height 4.57mm

Infineon OptiMOS™ 3 N-Channel MOSFET, 64 A, 250 V, 3-Pin TO-220 IPP200N25N3GXKSA1

Infineon OptiMOS™3 Power MOSFETs, 100V and over

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