N-Channel MOSFET, 630 mA, 20 V, 3-Pin SC-75 Vishay SI1012CR-T1-GE3

RS Stock No.:: 787-9005
Mfr. Part No.:: SI1012CR-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 630 mA, 20 V, 3-Pin SC-75 Vishay SI1012CR-T1-GE3

Bulk discount available

Price Each (On a Tape of 20)**

€0.269

(exc. VAT)

€0.331

(inc. VAT)

Temporarily out of stock - back order for despatch 21-04-2025, delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Tape**
20 - 180	€0.269	€5.38
200 - 480	€0.188	€3.76
500 - 980	€0.167	€3.34
1000 - 1980	€0.108	€2.16
2000 +	€0.095	€1.90

**price indicative

RS Stock No.:: 787-9005
Mfr. Part No.:: SI1012CR-T1-GE3
Manufacturer:: Vishay

Si1012CR, N-Channel 20V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	630 mA
Maximum Drain Source Voltage	20 V
Package Type	SC-75
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	1.1 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	240 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +8 V
Transistor Material	Si
Width	0.86mm
Typical Gate Charge @ Vgs	1.3 nC @ 8 V
Length	1.68mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	0.8mm

N-Channel MOSFET, 630 mA, 20 V, 3-Pin SC-75 Vishay SI1012CR-T1-GE3

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor

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