Vishay TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SIRA00DP-T1-GE3

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Subtotal (1 pack of 5 units)*

€12.73

(exc. VAT)

€15.66

(inc. VAT)

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  • 45 unit(s) ready to ship from another location
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Per Pack*
5 - 45€2.546€12.73
50 - 120€2.392€11.96
125 - 245€2.164€10.82
250 - 495€2.038€10.19
500 +€1.91€9.55

*price indicative

Packaging Options:
RS Stock No.:
787-9367
Mfr. Part No.:
SIRA00DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.35mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

104W

Typical Gate Charge Qg @ Vgs

147nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.25mm

Height

1.12mm

Width

5.26 mm

Automotive Standard

No

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