Vishay TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SIRA00DP-T1-GE3

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Subtotal (1 pack of 5 units)*

€10.18

(exc. VAT)

€12.52

(inc. VAT)

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Per Pack*
5 - 45€2.036€10.18
50 - 120€1.912€9.56
125 - 245€1.73€8.65
250 - 495€1.63€8.15
500 +€1.528€7.64

*price indicative

Packaging Options:
RS Stock No.:
787-9367
Mfr. Part No.:
SIRA00DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.35mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

147nC

Maximum Power Dissipation Pd

104W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Length

6.25mm

Width

5.26 mm

Height

1.12mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


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