Vishay TrenchFET Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin SO-8 SIRA06DP-T1-GE3

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Subtotal (1 tape of 5 units)*

€4.85

(exc. VAT)

€5.95

(inc. VAT)

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Units
Per unit
Per Tape*
5 - 45€0.97€4.85
50 - 245€0.824€4.12
250 - 495€0.68€3.40
500 - 1245€0.638€3.19
1250 +€0.60€3.00

*price indicative

Packaging Options:
RS Stock No.:
787-9373
Mfr. Part No.:
SIRA06DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.73V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

62.5W

Typical Gate Charge Qg @ Vgs

51nC

Maximum Operating Temperature

150°C

Width

5.26 mm

Height

1.12mm

Length

6.25mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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