N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA06DP-T1-GE3

RS Stock No.:: 165-7074
Mfr. Part No.:: SIRA06DP-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA06DP-T1-GE3

Temporarily out of stock - back order for despatch 19-12-2024, delivery within 2 working days

Price Each (On a Reel of 3000)

€0.428

(exc. VAT)

€0.526

(inc. VAT)

Units	Per unit	Per Reel*
3000 +	€0.428	€1,284.00

*price indicative

RS Stock No.:: 165-7074
Mfr. Part No.:: SIRA06DP-T1-GE3
Manufacturer:: Vishay

SiRA06DP, N-Channel 30V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	40 A
Maximum Drain Source Voltage	30 V
Package Type	PowerPAK SO-8
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	3.5 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.1V
Maximum Power Dissipation	62.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +20 V
Length	6.25mm
Transistor Material	Si
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Width	5.26mm
Typical Gate Charge @ Vgs	51 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	1.12mm

N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA06DP-T1-GE3

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor