Essential and Operational Technologies

These cookies make our website work. This includes product images and videos, functionality for the basket, logging in, remembering your username, registration and My Account.

We use optimisation cookies to test new features and designs on our website. The information collected helps us improve our website and our customers' experience.

Advertising

These cookies are used to understand the performance and relevancy of our adverts, to provide you with personalised adverts on other websites and social media, to track when you have arrived at our site from a recognised third-party affiliate website, and to track if you made a purchase based on the adverts we displayed to you.

Recommendations

These cookies enable us to provide personalised product and content recommendations, to make the browsing experience more relevant to you.

Functionality

These cookies are used to offer customer surveys and feedback, to improve search results, and to allow you to share content from our website on social media.

Analytics

These cookies help us improve our website by collecting and reporting information on how you use it.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	750 mA
	Maximum Drain Source Voltage	20 V
	Package Type	SOT-23
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	130 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.4V
	Maximum Power Dissipation	400 mW
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Length	3.04mm
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	1
	Width	1.4mm
	Height	1.01mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 750 mA
	Maximum Drain Source Voltage 20 V
	Package Type SOT-23
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 130 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.4V
	Maximum Power Dissipation 400 mW
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Length 3.04mm
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 1
	Width 1.4mm
	Height 1.01mm
	Minimum Operating Temperature -55 °C

onsemi N-Channel MOSFET, 750 mA, 20 V, 3-Pin SOT-23 MGSF1N02LT1G

N-Channel Power MOSFET, 20V, ON Semiconductor

Related links