Vishay TrenchFET Type P-Channel MOSFET, 2.2 A, 80 V Enhancement, 3-Pin SOT-23 SI2337DS-T1-GE3

Subtotal (1 pack of 20 units)*

€18.08

(exc. VAT)

€22.24

(inc. VAT)

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Being discontinued
  • 100 left, ready to ship from another location
  • Final 15,600 unit(s) shipping from 02 February 2026
Units
Per unit
Per Pack*
20 +€0.904€18.08

*price indicative

Packaging Options:
RS Stock No.:
812-3123
Mfr. Part No.:
SI2337DS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

80V

Series

TrenchFET

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.303Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

11nC

Minimum Operating Temperature

-50°C

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Height

1.02mm

Standards/Approvals

IEC 61249-2-21

Width

1.4 mm

Length

3.04mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor


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