N-Channel MOSFET, 11.3 A, 100 V, 6-Pin PowerPAK SC-70 Vishay SIA416DJ-T1-GE3

RS Stock No.:: 818-1441
Mfr. Part No.:: SIA416DJ-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 11.3 A, 100 V, 6-Pin PowerPAK SC-70 Vishay SIA416DJ-T1-GE3

Bulk discount available

Price Each (In a Pack of 20)

€0.505

(exc. VAT)

€0.621

(inc. VAT)

Temporarily out of stock - back order for despatch 03-06-2026, delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Pack**
20 - 180	€0.505	€10.10
200 - 480	€0.414	€8.28
500 - 980	€0.379	€7.58
1000 - 1980	€0.353	€7.06
2000 +	€0.303	€6.06

**price indicative

RS Stock No.:: 818-1441
Mfr. Part No.:: SIA416DJ-T1-GE3
Manufacturer:: Vishay

SiA416DJ, N-Channel 100V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	11.3 A
Maximum Drain Source Voltage	100 V
Package Type	PowerPAK SC-70
Series	ThunderFET
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	130 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.6V
Maximum Power Dissipation	19 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	2.15mm
Typical Gate Charge @ Vgs	6.5 nC @ 10 V
Length	2.15mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Transistor Material	Si
Height	0.75mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 11.3 A, 100 V, 6-Pin PowerPAK SC-70 Vishay SIA416DJ-T1-GE3

N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor

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