Essential and Operational Technologies

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Units	Per unit	Per Pack**
5 - 20	€3.028	€15.14
25 - 45	€2.694	€13.47
50 - 120	€2.542	€12.71
125 - 245	€2.362	€11.81
250 +	€2.18	€10.90

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	55 A
	Maximum Drain Source Voltage	100 V
	Package Type	D2PAK (TO-263)
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	40 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	200 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Width	9.65mm
	Typical Gate Charge @ Vgs	140 nC @ 5 V
	Length	10.67mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Maximum Operating Temperature	+175 °C
	Height	4.83mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 55 A
	Maximum Drain Source Voltage 100 V
	Package Type D2PAK (TO-263)
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 40 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 200 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Width 9.65mm
	Typical Gate Charge @ Vgs 140 nC @ 5 V
	Length 10.67mm
	Number of Elements per Chip 1
	Transistor Material Si
	Maximum Operating Temperature +175 °C
	Height 4.83mm
	Minimum Operating Temperature -55 °C

Infineon HEXFET N-Channel MOSFET, 55 A, 100 V, 3-Pin D2PAK IRL2910STRLPBF

N-Channel Power MOSFET 100V, Infineon

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