Texas Instruments NexFET N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 CSD19534KCS
- RS Stock No.:
- 900-9964
- Mfr. Part No.:
- CSD19534KCS
- Manufacturer:
- Texas Instruments
Bulk discount available
Subtotal (1 pack of 5 units)*
€7.62
(exc. VAT)
€9.375
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | €1.524 | €7.62 |
| 25 - 45 | €1.178 | €5.89 |
| 50 + | €1.154 | €5.77 |
*price indicative
- RS Stock No.:
- 900-9964
- Mfr. Part No.:
- CSD19534KCS
- Manufacturer:
- Texas Instruments
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Texas Instruments | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-220 | |
| Series | NexFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 20 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 118 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 17.1 nC @ 0 V | |
| Transistor Material | Si | |
| Width | 4.7mm | |
| Length | 10.67mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 16.51mm | |
| Forward Diode Voltage | 1.1V | |
| Select all | ||
|---|---|---|
Brand Texas Instruments | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220 | ||
Series NexFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 20 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 118 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 17.1 nC @ 0 V | ||
Transistor Material Si | ||
Width 4.7mm | ||
Length 10.67mm | ||
Minimum Operating Temperature -55 °C | ||
Height 16.51mm | ||
Forward Diode Voltage 1.1V | ||
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