N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK Vishay SiHB28N60EF-GE3

RS Stock No.:: 903-4504
Mfr. Part No.:: SiHB28N60EF-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK Vishay SiHB28N60EF-GE3

Bulk discount available

Price Each (In a Pack of 2)**

€5.475

(exc. VAT)

€6.734

(inc. VAT)

Stock check temporarily unavailable - call for stock availability

Units	Per unit	Per Pack**
2 - 18	€5.475	€10.95
20 - 48	€5.145	€10.29
50 - 98	€4.93	€9.86
100 - 198	€4.38	€8.76
200 +	€4.10	€8.20

**price indicative

RS Stock No.:: 903-4504
Mfr. Part No.:: SiHB28N60EF-GE3
Manufacturer:: Vishay

SiHB28N60EF, EF Series Power MOSFET with Fast Body Diode
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	28 A
Maximum Drain Source Voltage	600 V
Package Type	D2PAK (TO-263)
Series	EF Series
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	123 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	250 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Transistor Material	Si
Length	10.67mm
Typical Gate Charge @ Vgs	80 nC @ 10 V
Width	9.65mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	4.83mm
Forward Diode Voltage	1.2V

N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK Vishay SiHB28N60EF-GE3

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

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