Essential and Operational Technologies

These cookies make our website work. This includes product images and videos, functionality for the basket, logging in, remembering your username, registration and My Account.

We use optimisation cookies to test new features and designs on our website. The information collected helps us improve our website and our customers' experience.

Advertising

These cookies are used to understand the performance and relevancy of our adverts, to provide you with personalised adverts on other websites and social media, to track when you have arrived at our site from a recognised third-party affiliate website, and to track if you made a purchase based on the adverts we displayed to you.

Recommendations

These cookies enable us to provide personalised product and content recommendations, to make the browsing experience more relevant to you.

Functionality

These cookies are used to offer customer surveys and feedback, to improve search results, and to allow you to share content from our website on social media.

Analytics

These cookies help us improve our website by collecting and reporting information on how you use it.

Units	Per unit	Per Tube**
50 - 50	€1.056	€52.80
100 - 200	€1.003	€50.15
250 +	€0.95	€47.50

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	P
	Maximum Continuous Drain Current	12 A
	Maximum Drain Source Voltage	100 V
	Package Type	TO-220AB
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	300 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	88 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	38 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Length	10.41mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Width	4.7mm
	Height	9.01mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Vishay
	Channel Type P
	Maximum Continuous Drain Current 12 A
	Maximum Drain Source Voltage 100 V
	Package Type TO-220AB
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 300 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 88 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 38 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Length 10.41mm
	Number of Elements per Chip 1
	Transistor Material Si
	Width 4.7mm
	Height 9.01mm
	Minimum Operating Temperature -55 °C

Vishay P-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220AB IRF9530PBF

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

Related links