P-Channel MOSFET, 23 A, 30 V, 8-Pin PowerPAK 1212-8 Vishay SISS27DN-T1-GE3

RS Stock No.:: 919-4299
Mfr. Part No.:: SISS27DN-T1-GE3
Manufacturer:: Vishay

P-Channel MOSFET, 23 A, 30 V, 8-Pin PowerPAK 1212-8 Vishay SISS27DN-T1-GE3

4780 In stock for delivery within 2 working days

Price Each (On a Reel of 3000)

€0.285

(exc. VAT)

€0.351

(inc. VAT)

Units	Per unit	Per Reel*
3000 +	€0.285	€855.00

*price indicative

RS Stock No.:: 919-4299
Mfr. Part No.:: SISS27DN-T1-GE3
Manufacturer:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	23 A
Maximum Drain Source Voltage	30 V
Series	TrenchFET
Package Type	PowerPAK 1212-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	9 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	57 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Length	3.3mm
Transistor Material	Si
Width	3.3mm
Typical Gate Charge @ Vgs	92 nC @ 10 V
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	0.78mm

P-Channel MOSFET, 23 A, 30 V, 8-Pin PowerPAK 1212-8 Vishay SISS27DN-T1-GE3

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor