Infineon HEXFET N-Channel MOSFET, 57 A, 100 V, 3-Pin TO-220AB IRF3710PBF

RS Stock No.:: 919-4775
Mfr. Part No.:: IRF3710PBF
Manufacturer:: Infineon

Infineon HEXFET N-Channel MOSFET, 57 A, 100 V, 3-Pin TO-220AB IRF3710PBF

Bulk discount available

Subtotal (1 tube of 50 units)**

€54.35

(exc. VAT)

€66.85

(inc. VAT)

50 In stock for delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

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Units	Per unit	Per Tube**
50 - 50	€1.087	€54.35
100 - 200	€0.87	€43.50
250 - 450	€0.815	€40.75
500 - 950	€0.761	€38.05
1000 +	€0.706	€35.30

**price indicative

RS Stock No.:: 919-4775
Mfr. Part No.:: IRF3710PBF
Manufacturer:: Infineon

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 57A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF3710PBF

This MOSFET is a durable power semiconductor that is essential in various electronic applications. It is designed for high efficiency, excelling in settings that require low resistance and superior thermal performance, making it important for contemporary electronics in fields such as automation and mechanical systems.

Features & Benefits

• Utilises HEXFET technology for low on-resistance
• Handles a maximum continuous drain current of 57A
• Functions effectively within a drain-source voltage of 100V
• Enables fast switching capabilities to enhance overall performance
• Designed for operation at a maximum junction temperature of +175°C
• Optimised for thermal management with minimal heat generation

Applications

• Utilised in automotive power systems for efficient energy management
• Suitable for power supply circuits to enhance energy efficiency
• Applicable in motor control systems for high current scenarios
• Effective in industrial automation for consistent performance under load

What is the significance of the low on-resistance in this MOSFET?

Low on-resistance reduces power losses and enhances efficiency, which is crucial for high-performance applications.

Can it be used in high-temperature environments?

Yes, it operates effectively up to a maximum junction temperature of +175°C, fitting for challenging applications.

How does the gate threshold voltage affect operation?

The gate threshold voltage of 2V to 4V ensures effective switching, allowing for precise control in various circuit designs.

What type of mounting is suitable for this device?

This MOSFET is intended for through-hole mounting, facilitating secure installation in numerous applications.

Is there any thermal management needed during operation?

While the design offers good thermal performance, appropriate heat sinking may be advantageous in high power dissipation situations.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	57 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	23 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	200 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	4.83mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	130 nC @ 10 V
Transistor Material	Si
Number of Elements per Chip	1
Length	10.67mm
Minimum Operating Temperature	-55 °C
Height	9.02mm
Forward Diode Voltage	1.2V